Strain tuning of the emission axis of quantum emitters in an atomically thin semiconductor
Abstract
Strain engineering is a natural route to control the electronic and optical properties of two-dimensional (2D) materials. Recently, 2D semiconductors have also been demonstrated as an intriguing host of strain-induced quantum-confined emitters with unique valley properties inherited from the host semiconductor. Here, we study the continuous and reversible tuning of the light emitted by such localized emitters in a monolayer tungsten diselenide embedded in a van der Waals heterostructure. Biaxial strain is applied on the emitters via strain transfer from a lead magnesium niobate–lead titanate (PMN-PT) piezoelectric substrate. Efficient modulation of the emission energy of several localized emitters up to 10 meV has been demonstrated on application of a voltage on the piezoelectric substrate. Further, we also find that the emission axis rotates by ∼ 40 ∘ as the magnitude of the biaxial strain is varied on these emitters. These results elevate the prospect of using all electrically controlled devices where the property of the localized emitters in a 2D host can be engineered with elastic fields for an integrated opto-electronics and nano-photonics platform.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 27, 2020
- Source ID
- 10.1364/optica.377886
Entities
People
- Arunabh Mukherjee
- Carla Watson
- Chitraleema Chakraborty
- Dirk Englund
- Hyowon Moon
- Kumarasiri Konthasinghe
- Liangyu Qiu
- Nick Vamivakas
- Stephen M. Wu
- Tara Peña
- Wenhui Hou
Organizations
- Air Force Office of Scientific Research
- Army Research Office
- National Science Foundation
- National Science Foundation Directorate for Mathematical & Physical Sciences