Narrow-linewidth III-V/Si/Si3N4 laser using multilayer heterogeneous integration
Abstract
We demonstrate a novel I I I - V / S i / S i 3 N 4 structure to enable efficient electrically pumped lasing in a fully integrated S i 3 N 4 based external cavity for the first time. The laser shows superior temperature stability and low phase noise.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 03, 2020
- Source ID
- 10.1364/optica.384026
Entities
People
- Chao Xiang
- Jennifer Selvidge
- Joel Guo
- John E. Bowers
- Jonathan D. Peters
- M. J. Kennedy
- Paul A. Morton
- Warren Jin
Organizations
- Defense Advanced Research Projects Agency