Enhanced room temperature infrared LEDs using monolithically integrated plasmonic materials
Abstract
Remarkable systems have been reported recently using the polylithic integration of semiconductor optoelectronic devices and plasmonic materials exhibiting epsilon-near-zero (ENZ) and negative permittivity. In traditional noble metals, the ENZ and plasmonic response is achieved near the metal plasma frequency, limiting plasmonic optoelectronic device design flexibility. Here, we leverage an all-epitaxial approach to monolithically and seamlessly integrate designer plasmonic materials into a quantum dot light emitting diode, leading to a 5.6 × enhancement over an otherwise identical non-plasmonic control sample. The device presented exhibits optical powers comparable, and temperature performance far superior, to commercially available devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 08, 2020
- Source ID
- 10.1364/optica.402208
Entities
People
- Aaron J. Muhowski
- Andrew Briggs
- Daniel Wasserman
- Evan Simmons
- Leland Nordin
- Minjoo L. Lee
- Pankul Dhingra
- Seth R. Bank
- Viktor Podolskiy
Organizations
- Defense Advanced Research Projects Agency
- National Science Foundation