Optical analog of valley Hall effect of 2D excitons in hyperbolic metamaterial

Abstract

The robust spin and momentum valley locking of electrons in two-dimensional semiconductors makes the valley degree of freedom of great utility for functional optoelectronic devices. Owing to the difference in optical selection rules for the different valleys, these valley electrons can be addressed optically. The electrons and excitons in these materials exhibit the valley Hall effect, where the carriers from specific valleys are directed to different directions under electrical or thermal bias. Here we report the optical analog of valley Hall effect, where the light emission from the valley-polarized excitons in a monolayer W S 2 propagates in different directions owing to the preferential coupling of excitonic emission to the high momentum states of the hyperbolic metamaterial. The experimentally observed effects are corroborated with theoretical modeling of excitonic emission in the near field of hyperbolic media. The demonstration of the optical valley Hall effect using a bulk artificial photonic media without the need for nanostructuring opens the possibility of realizing valley-based excitonic circuits operating at room temperature.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jan 11, 2021
Source ID
10.1364/optica.404063

Entities

People

  • G. S. Agarwal
  • Mandeep Khatoniar
  • Nicholas Yama
  • Sriram Guddala
  • Vinod Menon
  • Wenxiao Liu

Organizations

  • Army Research Office
  • National Science Foundation
  • Robert A. Welch Foundation

Tags

Fields of Study

  • Physics

Readers

  • Finite Element Method (FEM) for solving Partial Differential Equations (PDEs)
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene
  • Quantum Science - Quantum Dots