Ultralow voltage, high-speed, and energy-efficient cryogenic electro-optic modulator

Abstract

Photonic integrated circuits (PICs) at cryogenic temperatures enable a wide range of applications in scalable classical and quantum systems for computing and sensing. A promising application of cryogenic PICs is to provide optical interconnects by upconverting signals from the electrical to the optical domain, allowing a massive data transfer from 4 K superconducting (SC) electronics to the room temperature environment. Such a solution can overcome a major bottleneck in the scalability of cryogenic systems that currently rely on bulky coaxial cables that suffer from limited bandwidth, a large heat load, and poor scalability. A key element to realize a cryogenic-to-room temperature optical interconnect is a high-speed, electro-optic (EO) modulator operating at 4 K with a modulation voltage at the mV scale, compatible with SC electronics. Although several cryogenic EO modulators have been demonstrated, their driving voltages are substantially large (several hundred mV to a few V) compared to the mV scale voltage provided by SC circuits. Here, we demonstrate a cryogenic modulator with ∼ 10 m V peak-to-peak driving voltage and Gb/s data rate, with an ultralow electric energy consumption of ∼ 10.4 a J / b i t and an optical energy consumption of ∼ 213 f J / b i t . We achieve this record performance by designing and fabricating a compact optical ring resonator modulator in a heterogeneous InP-on-Si platform, where we optimize a multi-quantum-well layer of InAIGaAs to achieve a strong EO effect at 4 K. Unlike other semiconductors such as silicon, our platform benefits from the high-carrier mobility and minimal free-carrier freezing of III-V compounds at low temperatures, with a moderate doping level and a correspondingly low loss (intrinsic resonator Q ∼ 272 , 000 ). These modulators can pave the path for complex cryogenic photonic functionalities and massive data transmission between cryogenic and room-temperature electronics.

Document Details

Document Type
Pub Defense Publication
Publication Date
Oct 20, 2022
Source ID
10.1364/optica.463722

Entities

People

  • Anshuman Singh
  • Chao Xiang
  • John E. Bowers
  • Jonathan Peters
  • Leonardo Ranzani
  • Martin V. Gustafsson
  • Minh A. Tran
  • Moe Soltani
  • Paolo Pintus
  • Weiqiang Xie

Organizations

  • Army Research Office
  • RTX
  • University of Cagliari
  • University of California

Tags

Fields of Study

  • Physics

Readers

  • Electrical Engineering
  • Integrated Circuit Design and Technology.
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.

Technology Areas

  • Microelectronics
  • Quantum Computing