Silicon-integrated nonlinear III-V photonics

Abstract

Mainstream silicon photonic integrated circuits are based on compact and low-loss silicon-on-insulator (SOI) waveguide platforms. However, monolithic SOI-based photonics provides only a limited number of functional device types. Here, to extend the on-chip capabilities, we propose a general heterogeneous integration approach to embed highly nonlinear III-V (AlGaAs) photonics into the SOI platform. We develop low-loss AlGaAs-on-SOI photonic circuits with integrated Si waveguides and showcase sub-milliwatt-threshold ( ∼ 0.25 mW ) Kerr frequency comb generation in ultrahigh- Q AlGaAs microrings ( Q over 10 6 ) at the telecom bands. Our demonstration complements existing mature Si photonics technology with efficient nonlinear functionalities provided by III-V and propels conventional Si photonics into emerging nonlinear photonic applications towards fully chip-based nonlinear engines.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 01, 2022
Source ID
10.1364/prj.446898

Entities

People

  • Chao Xiang
  • John E. Bowers
  • Jonathan Peters
  • Lin Chang
  • Warren Jin
  • Weiqiang Xie

Organizations

  • Defense Advanced Research Projects Agency
  • Shanghai Jiao Tong University
  • University of California, Santa Barbara

Tags

Fields of Study

  • Physics

Readers

  • Integrated Circuit Design and Technology.
  • Optical Physics and Photonics.

Technology Areas

  • Microelectronics