High-performance modified uni-traveling carrier photodiode integrated on a thin-film lithium niobate platform
Abstract
Lithium niobate on insulator (LNOI) has become an intriguing platform for integrated photonics for applications in communications, microwave photonics, and computing. Whereas, integrated devices including modulators, resonators, and lasers with high performance have been recently realized on the LNOI platform, high-speed photodetectors, an essential building block in photonic integrated circuits, have not been demonstrated on LNOI yet. Here, we demonstrate for the first time, heterogeneously integrated modified uni-traveling carrier photodiodes on LNOI with a record-high bandwidth of 80 GHz and a responsivity of 0.6 A/W at a 1550-nm wavelength. The photodiodes are based on an n-down InGaAs/InP epitaxial layer structure that was optimized for high carrier transit time-limited bandwidth. Photodiode integration was achieved using a scalable wafer die bonding approach that is fully compatible with the LNOI platform.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 12, 2022
- Source ID
- 10.1364/prj.455969
Entities
People
- Andreas Beling
- Bingtian Guo
- Dekang Chen
- Fengxin Yu
- Jesse Morgan
- Junyi Gao
- Kevin Luke
- Keye Sun
- Linbo Shao
- Ling-Yan He
- Marko Loncar
- Masoud Jafari
- Mian Zhang
- Qianhuan Yu
- Ta-Ching Tzu
- Xiangwen Guo
- Yang Shen
Organizations
- Air Force Office of Scientific Research
- Defense Advanced Research Projects Agency
- Harvard University
- National Science Foundation
- University of Virginia