Gate-tunable metafilm absorber based on indium silicon oxide
Abstract
In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 20, 2019
- Source ID
- 10.1515/nanoph-2019-0190
Entities
People
- Hamid T Chorsi
- Hongwei Zhao
- Jon A Schuller
- Jonathan Klamkin
- Luca Dal Negro
- Prasad P. Iyer
- Ran Zhang
- Wesley A. Britton
- Yuyao Chen
Organizations
- Boston University
- National Science Foundation
- United States Air Force
- University of California