High-performance integrated graphene electro-optic modulator at cryogenic temperature
Abstract
High-performance integrated electro-optic modulators operating at low temperature are critical for optical interconnects in cryogenic applications. Existing integrated modulators, however, suffer from reduced modulation efficiency or bandwidth at low temperatures because they rely on tuning mechanisms that degrade with decreasing temperature. Graphene modulators are a promising alternative because graphene’s intrinsic carrier mobility increases at low temperature. Here, we demonstrate an integrated graphene-based electro-optic modulator whose 14.7 GHz bandwidth at 4.9 K exceeds the room temperature bandwidth of 12.6 GHz. The bandwidth of the modulator is limited only by high contact resistance, and its intrinsic RC-limited bandwidth is 200 GHz at 4.9 K.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 25, 2020
- Source ID
- 10.1515/nanoph-2020-0363
Entities
People
- Alexandre P. Freitas
- Aseema Mohanty
- Brian S. Lee
- Bumho Kim
- Gaurang R. Bhatt
- James C. Hone
- Michal Lipson
- Yibo Zhu
Organizations
- Air Force Materiel Command
- Air Force Office of Scientific Research
- Columbia University
- Defense Advanced Research Projects Agency
- Hypres
- National Aeronautics and Space Administration
- National Science Foundation
- Office of Naval Research
- University of Campinas