Materials for ultra-efficient, high-speed optoelectronics
Abstract
High-speed optoelectronics is central to many important developments in the communication, computing, sensing, imaging, and autonomous vehicle industries. With a sharp rise of attention on energy efficiency, researchers have proposed and demonstrated innovative materials, high-speed devices, and components integrated on a single platform that exhibit ultralow power consumption and ultrawide bandwidth. Recently reported material growth and device fabrication techniques offer the potential for high-density integration of optoelectronics close to the capability and cost of conventional electronics. A tremendous synergy can be attained by integrating multiple materials with superior properties on the same chip using heterogeneous integration, heteroepitaxy, nano-heteroepitaxy, and other co-packaging strategies within the complementary metal oxide semiconductor (CMOS) ecosystem. This issue of MRS Bulletin offers an overview of the field and covers the latest developments on various ultraefficient materials, high-speed devices, their physical properties, current trends, and future directions in optoelectronics and their integration on a silicon platform.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2022
- Source ID
- 10.1557/s43577-022-00337-y
Entities
People
- Galan Moody
- M. Saif Islam
Organizations
- Air Force Office of Scientific Research
- Center for Information Technology Research in the Interest of Society
- National Science Foundation