Defects at nanoscale semiconductor interfaces: Challenges and opportunities
Abstract
The past 75 years has been an exciting and dynamic time for solid-state electronic materials with advanced micro- and optoelectronic properties but point defects at semiconductor–metal interfaces that limit their operation have been a challenge to understand and control. These defects depend strongly on chemical structure at the intimate interface, and techniques have now developed to learn how their presence at nanoscale dimensions impact electronic structure at the macroscale. A combination of optical, electronic, and microscopic techniques can now enable new directions for defect research of metal–semiconductor interfaces at the nano/atomic scale. These nanoscale and atomic scale techniques can meet the experimental challenges inherent at this scale and create opportunities for new defect research of electronic material interfaces at a deeper level.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 29, 2023
- Source ID
- 10.1557/s43578-023-01229-w
Entities
People
- Leonard J Brillson
Organizations
- Air Force Office of Scientific Research
- National Science Foundation