Unveiling oxidation mechanism of bulk ZrS2
Abstract
Transition metal dichalcogenides have shown great potential for next-generation electronic and optoelectronic devices. However, native oxidation remains a major issue in achieving their long-term stability, especially for Zr-containing materials such as ZrS2. Here, we develop a first principles-informed reactive forcefield for Zr/O/S to study oxidation dynamics of ZrS2. Simulation results reveal anisotropic oxidation rates between (210) and (001) surfaces. The oxidation rate is highly dependent on the initial adsorption of oxygen molecules on the surface. Simulation results also provide reaction mechanism for native oxide formation with atomistic details.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Feb 02, 2021
- Source ID
- 10.1557/s43580-021-00007-2
Entities
People
- Aiichiro Nakano
- Ankit Mishra
- Aravind Krishnamoorthy
- Liqiu Yang
- Priya Vashishta
- R Jaramillo
- Rajiv K. Kalia
- Seong Soon Jo
- Subodh C Tiwari
- Sungwook Hong
Organizations
- United States Department of Energy