Material aspects of giga-Hertz ZnO TFTs for wireless systems
Abstract
Having enabled high-value application capabilities through mass production of flat-panel displays, X-ray imagers, and solar panels, Large-Area Electronics (LAE) holds potential to open new frontiers in wireless applications for the Internet of Things and 5G/6G, by enabling unprecedented spatial control and power efficiency through large size and flexible form factor of radiative apertures. However, this requires boosting operation frequencies from the traditional limits in the range of 10–100’s of mega-Hertz to multi giga-Hertz. In this paper, we discuss critical device metrics, to characterize zinc-oxide (ZnO) thin-film transistor (TFT) operation frequency for both active (for signal amplification) and passive components in LAE-based circuits and systems. We then describe the key structural and material approaches towards recently demonstrated LAE-based giga-Hertz wireless systems employing ZnO TFTs. Bringing LAE to the giga-Hertz regime provides a path towards flexible and meter-scale monolithic integrated wireless systems.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 01, 2022
- Source ID
- 10.1557/s43580-022-00240-3
Entities
People
- Can Wu
- James C. Sturm
- Naveen Verma
- Sigurd Wagner
- Yoni Mehlman
- Yue Ma
Organizations
- Defense Advanced Research Projects Agency
- Princeton Plasma Physics Laboratory
- Semiconductor Research Corporation