Large remnant polarization and great reliability characteristics in W/HZO/W ferroelectric capacitors
Abstract
In this work, the effect of rapid thermal annealing (RTA) temperature on the ferroelectric polarization in zirconium-doped hafnium oxide (HZO) was studied. To maximize remnant polarization (2Pr), in-plane tensile stress was induced by tungsten electrodes under optimal RTA temperatures. We observed an increase in 2Pr with RTA temperature, likely due to an increased proportion of the polar ferroelectric phase in HZO. The HZO capacitors annealed at 400°C did not exhibit any ferroelectric behavior, whereas the HZO capacitors annealed at 800°C became highly leaky and shorted for voltages above 1 V. On the other hand, annealing at 700 °C produced HZO capacitors with a record-high 2Pr of ∼ 64 μC cm−2 at a relatively high frequency of 111 kHz. These ferroelectric capacitors have also demonstrated impressive endurance and retention characteristics, which will greatly benefit neuromorphic computing applications.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 25, 2022
- Source ID
- 10.3389/fmats.2022.969188
Entities
People
- Dawei Gao
- J. Joshua Yang
- James Nicolas Pagaduan
- Jungmin Lee
- Mark Barnell
- Qiangfei Xia
- Qing Wu
- Reika Katsumata
- Rivu Midya
- Sabyasachi Ganguli
- Shiva Asapu
- Taehwan Moon
- Ye Zhuo
- Yong Chen
Organizations
- Air Force Research Laboratory
- National Science Foundation
- University of Massachusetts Amherst