Electronic and Transport Properties of Epitaxial Graphene on SiC and 3C-SiC/Si: A Review

Abstract

The electronic and transport properties of epitaxial graphene are dominated by the interactions the material makes with its surroundings. Based on the transport properties of epitaxial graphene on SiC and 3C-SiC/Si substrates reported in the literature, we emphasize that the graphene interfaces formed between the active material and its environment are of paramount importance, and how interface modifications enable the fine-tuning of the transport properties of graphene. This review provides a renewed attention on the understanding and engineering of epitaxial graphene interfaces for integrated electronics and photonics applications.

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 24, 2020
Source ID
10.3390/app10124350

Entities

People

  • Aiswarya Pradeepkumar
  • D. Kurt Gaskill
  • Francesca Iacopi

Organizations

  • Air Force Office of Scientific Research

Tags

Fields of Study

  • Materials science

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Semiconductor Device Technology
  • Systems Analysis and Design

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene