Recent Progress on Irradiation-Induced Defect Engineering of Two-Dimensional 2H-MoS2 Few Layers

Abstract

Atom-thick two-dimensional materials usually possess unique properties compared to their bulk counterparts. Their properties are significantly affected by defects, which could be uncontrollably introduced by irradiation. The effects of electromagnetic irradiation and particle irradiation on 2H MoS 2 two-dimensional nanolayers are reviewed in this paper, covering heavy ions, protons, electrons, gamma rays, X-rays, ultraviolet light, terahertz, and infrared irradiation. Various defects in MoS 2 layers were created by the defect engineering. Here we focus on their influence on the structural, electronic, catalytic, and magnetic performance of the 2D materials. Additionally, irradiation-induced doping is discussed and involved.

Document Details

Document Type
Pub Defense Publication
Publication Date
Feb 16, 2019
Source ID
10.3390/app9040678

Entities

People

  • Abdellah Lisfi
  • Chundong Wang
  • Guang-yi Zhao
  • Hua Deng
  • Jia-An Yan
  • Michael Guy
  • Nathaniel Tyree
  • Qing Peng
  • Yucheng Lan

Organizations

  • National Natural Science Foundation of China
  • National Science Foundation
  • United States Army Research Laboratory

Tags

Fields of Study

  • Physics

Readers

  • Nanoscale Plasmonic Nanotechnology
  • Quantum Dot Semiconductor Device Photonics and Graphene Optoelectronic Materials and THz Physics.
  • Solar Physics

Technology Areas

  • Microelectronics
  • Microelectronics - Graphene