Highly Conductive Co-Doped Ga2O3:Si-In Grown by MOCVD
Abstract
We report a highly conductive gallium oxide doped with both silicon and indium grown on c-plane sapphire substrate by MOCVD. From a superlattice structure of indium oxide and gallium oxide doped with silicon, we obtained a highly conductive material with an electron hall mobility up to 150 cm2/V·s with the carrier concentration near 2 × 1017 cm−3. However, if not doped with silicon, both Ga2O3:In and Ga2O3 are highly resistive. Optical and structural characterization techniques such as X-ray, transmission electron microscope, and photoluminescence, reveal no significant incorporation of indium into the superlattice materials, which suggests the indium plays a role of a surfactant passivating electron trapping defect levels.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 02, 2021
- Source ID
- 10.3390/coatings11030287
Entities
People
- Honghyuk Kim
- Junhee Lee
- Lakshay Gautam
- Manijeh Razeghi
Organizations
- United States Air Force