High Thermal Stability of κ-Ga2O3 Grown by MOCVD
Abstract
We report a high thermal stability of kappa gallium oxide grown on c-plane sapphire substrate by metal organic chemical vapor deposition. Kappa gallium oxide is widely known as a metastable polymorph transitioning its phase when subjected to a high temperature. Here, we show the kappa gallium oxide whose phase is stable in a high temperature annealing process at 1000 °C. These oxide films were grown at 690 °C under nitrogen carrier gas. The materials showed high electrical resistivity when doped with silicon, whereas the film conductivity was significantly improved when doped with both indium and silicon. This work provides a pathway to overcoming limitations for the advance in utilizing kappa gallium oxide possessing superior electrical characteristics.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 20, 2021
- Source ID
- 10.3390/cryst11040446
Entities
People
- Honghyuk Kim
- Junhee Lee
- Lakshay Gautam
- Manijeh Razeghi
Organizations
- United States Air Force