Semipolar {202¯1} GaN Edge-Emitting Laser Diode on Epitaxial Lateral Overgrown Wing
Abstract
Edge-emitting laser diodes (LDs) were fabricated on a reduced dislocation density epitaxial lateral overgrown (ELO) wing of a semipolar {202¯1} GaN substrate, termed an ELO wing LD. Two types of facet feasibility studies were conducted: (1) “handmade” facets, wherein lifted-off ELO wing LDs were cleaved manually, and (2) facets formed on wafers through reactive ion etching (RIE). Pulsed operation electrical and optical measurements confirmed the laser action in the RIE facet LDs with a threshold current of ~19 kAcm−2 and maximum light output power of 20 mW from a single uncoated facet. Handmade facet devices showed spontaneous, LED-like emission, confirming device layers remain intact after mechanical liftoff.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Dec 14, 2021
- Source ID
- 10.3390/cryst11121563
Entities
People
- Haojun Zhang
- Hongjian Li
- Matthew S. Wong
- Pavel Shapturenka
- Ryan Anderson
- Shuji Nakamura
- Srinivas Gandrothula
- Steven P. DenBaars
- Takeshi Kamikawa
Organizations
- Defense Advanced Research Projects Agency