Low Forward Voltage III-Nitride Red Micro-Light-Emitting Diodes on a Strain Relaxed Template with an InGaN Decomposition Layer
Abstract
In this study, III-nitride red micro-light-emitting diodes (µLEDs) with ultralow forward voltage are demonstrated on a strain relaxed template. The forward voltage ranges between 2.00 V and 2.05 V at 20 A/cm2 for device dimensions from 5 × 5 to 100 × 100 µm2. The µLEDs emit at 692 nm at 5 A/cm2 and 637 nm at 100 A/cm2, corresponding to a blueshift of 55 nm due to the screening of the internal electric field in the quantum wells. The maximum external quantum efficiency and wall-plug efficiency of µLEDs are 0.31% and 0.21%, respectively. This suggests that efficient III-nitride red µLEDs can be realized with further material optimizations.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 19, 2022
- Source ID
- 10.3390/cryst12050721
Entities
People
- Haojun Zhang
- James S. Speck
- Matthew S. Wong
- Norleakvisoth Lim
- Philip Chan
- Ryan C. White
- Shuji Nakamura
- Steven P. DenBaars