Fully Relaxed, Crack-Free AlGaN with upto 50% Al Composition Grown on Porous GaN Pseudo-Substrate
Abstract
Fully relaxed, crack free, smooth AlxGa1−xN layers with up to 50% Al composition were demonstrated on pseudo-substrates composed of dense arrays of 10 × 10 µm2 compliant porous GaN-on-porous-GaN tiles. The AlGaN layers were grown in steps for a total of 1.3 µm. The growth conditions necessary to demonstrate high quality films at higher Al compositions also suppressed any sidewall growth.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 16, 2022
- Source ID
- 10.3390/cryst12070989
Entities
People
- Emmanuel Kayede
- Henry Collins
- Nirupam Hatui
- S. Keller
- Shubhra S Pasayat
- Umesh Mishra
- Weiyi Li
Organizations
- Office of Naval Research