Demonstration of C-Plane InGaN-Based Blue Laser Diodes Grown on a Strain-Relaxed Template
Abstract
Electrically driven c-plane InGaN-based blue edge emitting laser diodes on a strain-relaxed template (SRT) are successfully demonstrated. The relaxation degree of the InGaN buffer was 26.6%, and the root mean square (RMS) roughness of the surface morphology was 0.65 nm. The laser diodes (LDs) on the SRT laser at 459 nm had a threshold current density of 52 kA/cm2 under the room temperature pulsed operation. The internal loss of the LDs on the SRT was 30–35 cm−1. Regardless of the high threshold current density, this is the first demonstrated laser diode using the strain-relaxed method on c-plane GaN.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Aug 27, 2022
- Source ID
- 10.3390/cryst12091208
Entities
People
- Hsun-ming Chang
- Michael Gordon
- Norleakvisoth Lim
- Philip Chan
- Shuji Nakamura
- Steven P. DenBaars
- Vincent Rienzi
Organizations
- Defense Advanced Research Projects Agency