InGaN Based C-Plane Blue Laser Diodes on Strain Relaxed Template with Reduced Absorption Loss
Abstract
InGaN based c-plane blue LDs on strain relaxed template (SRT) with a reduced absorption loss was demonstrated. The loss is reduced from 27 cm−1 to 20 cm−1. Due to the lower loss, threshold current density is improved from 51.1 kA/cm2 to 43.7 kA/cm2, and slope efficiency is also increased by a factor of 1.22. The absorption loss from decomposition layer (DL) in SRT is confirmed to be a major extra loss source by both experimental and simulation results. With a higher indium content in buffer and waveguide layers, optical leakage into DL can be suppressed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 01, 2022
- Source ID
- 10.3390/cryst12091230
Entities
People
- Daniel A. Cohen
- Haojun Zhang
- Hsun–Ming Chang
- Michael J. Gordon
- Norleakvisoth Lim
- Philip Chan
- Shuji Nakamura
- Steven P. DenBaars
- Vincent Rienzi
Organizations
- Defense Advanced Research Projects Agency