Metal Organic Vapor Phase Epitaxy of Thick N-Polar InGaN Films
Abstract
Hillock-free thick InGaN layers were grown on N-polar GaN on sapphire by metal organic vapor phase epitaxy using a digital growth scheme and H2 as surfactant. Introducing Mg to act as an additional surfactant and optimizing the H2 pulse time, In compositions up to 17% were obtained in 100 nm thick epilayers. Although Mg adversely affected the In incorporation, it enabled maintenance of a good surface morphology while decreasing the InGaN growth temperature, resulting in a net increase in In composition. The parameter space of growth temperature and Mg precursor flow to obtain hillock-free epilayers was mapped out.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 15, 2021
- Source ID
- 10.3390/electronics10101182
Entities
People
- Athith Krishna
- Nirupam Hatui
- S. Keller
- Shubhra S Pasayat
- Umesh Mishra
Organizations
- Office of Naval Research
- Semiconductor Research Corporation