Power-Dependent Investigation of Photo-Response from GeSn-Based p-i-n Photodetector Operating at High Power Density
Abstract
We report an investigation on the photo-response from a GeSn-based photodetector using a tunable laser with a range of incident light power. An exponential increase in photocurrent and an exponential decay of responsivity with increase in incident optical power intensity were observed at higher optical power range. Time-resolved measurement provided evidence that indicated monomolecular and bimolecular recombination mechanisms for the photo-generated carriers for different incident optical power intensities. This investigation establishes the appropriate range of optical power intensity for GeSn-based photodetector operation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 27, 2022
- Source ID
- 10.3390/ma15030989
Entities
People
- C. C. Chang
- Gary A. Sevison
- Greg Sun
- Hung-hsiang Cheng
- Imad Agha
- Jay Mathews
- Joshua R Hendrickson
- Richard Soref
- Zairui Li
Organizations
- Air Force Office of Scientific Research