Improvement of p-Type AlGaN Conductivity with an Alternating Mg-Doped/Un-Doped AlGaN Layer Structure
Abstract
Using molecular beam epitaxy, we prepared seven p-type AlGaN samples of ~25% in Al content, including six samples with Mg-doped/un-doped AlGaN alternating-layer structures of different layer-thickness combinations, for comparing their p-type performances. Lower sheet resistance and higher effective hole mobility are obtained in a layer-structured sample, when compared with the reference sample of uniform Mg doping. The improved p-type performance in a layer-structured sample is attributed to the diffusion of holes generated in an Mg-doped layer into the neighboring un-doped layers, in which hole mobility is significantly higher because of weak ionized impurity scattering. Among the layer-structured samples, that of 6/4 nm in Mg-doped/un-doped thickness results in the lowest sheet resistance (the highest effective hole mobility), which is 4.83 times lower (4.57 times higher) when compared with the sample of uniform doping. The effects of the Mg-doped/un-doped layer structure on p-type performance in AlGaN and GaN are compared.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jul 18, 2021
- Source ID
- 10.3390/mi12070835
Entities
People
- Chi-chung Chen
- Chih-Chung Yang
- Chung-chi Chen
- Kent L. Averett
- Ping-Hsiu Wu
- Shin Mou
- Ting-chun Huang
- Yu-Wei Lin
- Yu-cheng Su
- Yu-ren Lin
Organizations
- Air Force Office of Scientific Research
- National Science and Technology Council