Quantum Dot Lasers Directly Grown on 300 mm Si Wafers: Planar and In-Pocket
Abstract
We report for the first time the direct growth of quantum dot (QD) lasers with electrical pumping on 300 mm Si wafers on both a planar template and in-pocket template for in-plane photonic integration. O-band lasers with five QD layers were grown with molecular beam epitaxy (MBE) in a 300 mm reactor and then fabricated into standard Fabry–Perot ridge waveguide cavities. Edge-emitting lasers are demonstrated with high yield and reliable results ready for commercialization and scaled production, and efforts to make monolithically integrated lasing cavities grown on silicon-on-insulator (SOI) wafers vertically aligned and coupled to SiN waveguides on the same chip show the potential for 300 mm-scale Si photonic integration with in-pocket direct MBE growth.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 06, 2023
- Source ID
- 10.3390/photonics10050534
Entities
People
- Andrew Clark
- Chen Shang
- David Harame
- Eamonn T Hughes
- John E. Bowers
- Kaiyin Feng
- Peter Ludewig
- Rosalyn Koscica
Organizations
- Air Force Research Laboratory
- SUNY Polytechnic Institute
- University of California, Santa Barbara