Low Noise Short Wavelength Infrared Avalanche Photodetector Using SB-Based Strained Layer Superlattice
Abstract
We demonstrate low noise short wavelength infrared (SWIR) Sb-based type II superlattice (T2SL) avalanche photodiodes (APDs). The SWIR GaSb/(AlAsSb/GaSb) APD structure was designed based on impact ionization engineering and grown by molecular beam epitaxy on a GaSb substrate. At room temperature, the device exhibits a 50% cut-off wavelength of 1.74 µm. The device was revealed to have an electron-dominated avalanching mechanism with a gain value of 48 at room temperature. The electron and hole impact ionization coefficients were calculated and compared to give a better prospect of the performance of the device. Low excess noise, as characterized by a carrier ionization ratio of ~0.07, has been achieved.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 30, 2021
- Source ID
- 10.3390/photonics8050148
Entities
People
- Arash Dehzangi
- Jiakai Li
- Manijeh Razeghi
Organizations
- Defense Advanced Research Projects Agency