Photonic Crystal Surface Emitting Diode Lasers with λ near 2 µm
Abstract
Epitaxially regrown electrically pumped photonic crystal surface emitting lasers (PCSELs) operating near 2 µm were designed and fabricated within a III-V-Sb material system. A high-index-contrast photonic crystal layer was incorporated into the laser heterostructures by air-pocket-retaining epitaxial regrowth. Transmission electron microscopy studies confirmed uniform and continuous AlGaAsSb initial growth over the nano-patterned GaSb surface, followed by the development of the air-pockets. The PCSEL threshold current density had a minimal value of ~170 A/cm2 in the 160–180 K temperature range when the QW gain spectrum aligned with the Γ2 band edge of the photonic crystal. The devices operated in a continuous wave regime at 160 K. The divergence and polarization of the multimode laser beam emitted from the 200 µm × 200 µm PCSEL aperture were controlled by filamentation.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 22, 2022
- Source ID
- 10.3390/photonics9120891
Entities
People
- Aaron Stein
- Dmitri Zakharov
- G. Kipshidze
- Gregory Belenky
- Kim Kisslinger
- L. Shterengas
- Ruiyan Liu
Organizations
- Army Research Office