Highly conductive epitaxial β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD
Abstract
We report on the epitaxial growth of highly conductive degenerated Ge or Si doped β-Ga2O3 and β-(Al x Ga1−x )2O3 films by MOCVD. Highly conductive homoepitaxial β-Ga2O3 layers with record conductivities of 2523 and 1581 S cm−1 were realized using Si and Ge dopants. Highly conductive Si doped β-(Al x Ga1−x )2O3 films were also grown. The incorporation of Si decreased with the increase in Al content and layer thickness. Record high conductivity of 612 S cm−1 was attained for coherently strained β-(Al0.12Ga0.88)2O3.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Sep 14, 2022
- Source ID
- 10.35848/1347-4065/ac8bbc
Entities
People
- A. Osinsky
- Fikadu Alema
- James S. Speck
- Samuel Vogt
- Takeki Itoh
Organizations
- Air Force Office of Scientific Research
- Office of Naval Research