Determination of anisotropic optical properties of MOCVD grown m-plane α-(Al x Ga1−x )2O3 alloys
Abstract
The anisotropic dielectric functions (DF) of corundum structured m-plane α-(Al x Ga1−x )2O3 thin films (up to x = 0.76) grown on m-plane sapphire substrate by metalorganic CVD have been investigated. IR and visible–UV spectroscopic ellipsometry yields the DFs, while X-ray diffraction revealed the lattice parameters (a, m, c), showing the samples are almost fully relaxed. Analysis of the IR DFs from 250 to 6000 cm−1 by a complex Lorentz oscillator model yields the anisotropic IR active phonons E u and A 2u and the shift towards higher wavenumbers with increasing Al content. Analyzing the UV DFs from 0.5 to 6.6 eV we find the change in the dielectric limits ε ∞ and the shift of the Γ-point transition energies with increasing Al content. This results in anisotropic bowing parameters for α-(Al x Ga1−x )2O3 of b ⊥ = 2.1 eV and b ∣∣ = 1.7 eV.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 01, 2023
- Source ID
- 10.35848/1347-4065/acd095
Entities
People
- A F M Anhar Uddin Bhuiyan
- André Strittmatter
- Elias Kluth
- Hongping Zhao
- Jürgen Bläsing
- Lingyu Meng
- Martin Feneberg
- Rüdiger Goldhahn
Organizations
- German Research Foundation
- National Science Foundation
- United States Department of Defense