Polycrystalline diamond growth on β-Ga2O3 for thermal management
Abstract
We report polycrystalline diamond epitaxial growth on β-Ga2O3 for device-level thermal management. We focused on establishing diamond growth conditions on β-Ga2O3 accompanying the study of various nucleation strategies. A growth window was identified, yielding uniform-coalesced films while maintaining interface smoothness. In this first demonstration of diamond growth on β-Ga2O3, a diamond thermal conductivity of 110 ± 33 W m−1 K−1 and a diamond/β-Ga2O3 thermal boundary resistance of 30.2 ± 1.8 m2K G−1 W−1 were measured. The film stress was managed by growth optimization techniques preventing delamination of the diamond film. This work marks the first significant step towards device-level thermal management of β-Ga2O3 electronic devices.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Apr 16, 2021
- Source ID
- 10.35848/1882-0786/abf4f1
Entities
People
- Chao Yuan
- Chenhao Ren
- David W. Snyder
- James Spencer Lundh
- Joseph E. Brown
- Mohamadali Malakoutian
- Robert M. Lavelle
- Samuel Graham
- Srabanti Chowdhury
- Sukwon Choi
- Yiwen Song
Organizations
- Air Force Office of Scientific Research