130 mA mm−1 β-Ga2O3 metal semiconductor field effect transistor with low-temperature metalorganic vapor phase epitaxy-regrown ohmic contacts
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 22, 2021
- Source ID
- 10.35848/1882-0786/ac07ef
Entities
People
- Arkka Bhattacharyya
- Daniel P. Shoemaker
- James Spencer Lundh
- Praneeth Ranga
- Saurav Roy
- Sriram Krishnamoorthy
- Sukwon Choi
- Yiwen Song
Organizations
- Air Force Office of Scientific Research
- National Science Foundation