Influence of collector doping setback in the quantum transport characteristics of GaN/AlN resonant tunneling diodes
Abstract
Harnessing resonant tunneling transport in III-nitride semiconductors to boost the operating frequencies of electronic and photonic devices, requires a thorough understanding of the mechanisms that limit coherent tunneling injection. Towards this goal, we present a concerted experimental and theoretical study that elucidates the impact of the collector doping setback on the quantum transport characteristics of GaN/AlN resonant tunneling diodes (RTDs). Employing our analytical model for polar RTDs, we quantify the width of the resonant-tunneling line shape, demonstrating that the setback helps preserve coherent injection. This design results in consistently higher peak-to-valley-current ratios (PVCRs), obtaining a maximum PVCR = 2.01 at cryogenic temperatures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 12, 2021
- Source ID
- 10.35848/1882-0786/ac345e
Entities
People
- Debdeep Jena
- Huili Grace Xing
- Jimy Encomendero Risco
- Vladimir Protasenko
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- Office of Naval Research
- Semiconductor Research Corporation