4.4 kV β-Ga2O3 MESFETs with power figure of merit exceeding 100 MW cm−2
Abstract
β-Ga2O3 metal–semiconductor field-effect transistors are realized with superior reverse breakdown voltages (V BR) and ON currents (I DMAX). A sandwiched SiN x dielectric field plate design is utilized that prevents etching-related damage in the active region and a deep mesa-etching was used to reduce reverse leakage. The device with L GD = 34.5 μm exhibits an I DMAX of 56 mA mm−1, a high I ON/I OFF ratio >108 and a very low reverse leakage until catastrophic breakdown at ∼4.4 kV. A power figure of merit (PFOM) of 132 MW cm−2 was calculated for a V BR of ∼4.4 kV. The reported results are the first >4 kV class Ga2O3 transistors to surpass the theoretical unipolar FOM of silicon.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 16, 2022
- Source ID
- 10.35848/1882-0786/ac6729
Entities
People
- A. Osinsky
- Arkka Bhattacharyya
- Carl Peterson
- Fikadu Alema
- Geroge Seryogin
- Praneeth Ranga
- Saurav Roy
- Shivam Sharma
- Sriram Krishnamoorthy
- Uttam Singisetti
Organizations
- Air Force Office of Scientific Research
- National Science Foundation
- United States Department of Defense