N-polar GaN p-n junction diodes with low ideality factors
Abstract
High-quality N-polar GaN p-n diodes are realized on single-crystal N-polar GaN bulk substrate by plasma-assisted molecular beam epitaxy. The room-temperature current–voltage characteristics reveal a high on/off current ratio of >1011 at ±4 V and an ideality factor of 1.6. As the temperature increases to 200 °C, the apparent ideality factor gradually approaches 2. At such high temperatures, Shockley–Read–Hall recombination times of 0.32–0.46 ns are estimated. The measured electroluminescence spectrum is dominated by a strong near-band edge emission, while deep level and acceptor-related luminescence is greatly suppressed.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- May 20, 2022
- Source ID
- 10.35848/1882-0786/ac6ec5
Entities
People
- Debdeep Jena
- Huili Grace Xing
- Kazuki Nomoto
- Yong-Jin Cho
Organizations
- Air Force Office of Scientific Research
- Division of Materials Research
- National Science Foundation