Realization of flexible AlGaN/GaN HEMT by laser liftoff
Abstract
We demonstrate fully fabricated AlGaN/GaN high electron mobility transistors (HEMTs) transferred from sapphire to copper tape on flexible polyethylene terephthalate using 193 nm excimer laser liftoff (LLO). The heterojunction is structurally intact after LLO, leading to preserved electron mobility μ n ∼1630 cm2 V−1 s−1 and carrier concentration n s ∼1013 cm−2. The maximum drain saturation current decreased by ∼18% after transfer, which is a lower reduction than other reported transfer methods. The drain current of this flexible HEMT increased monotonically under tensile stress applied using a convex-shaped plate, while the threshold voltage shifted more negative in quantitative agreement with the expected piezoelectric charge for an intact heterojunction.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 29, 2022
- Source ID
- 10.35848/1882-0786/ac7847
Entities
People
- Asif Khan
- Grigory Simin
- Kamal Hussain
- M. V. S. Chandrashekhar
- Md. Didarul Alam
- Shahab Mollah
Organizations
- Army Research Office
- National Science Foundation
- Office of Naval Research Global