High figure of merit extreme bandgap Al0.87Ga0.13N-Al0.64Ga0.36N heterostructures over bulk AlN substrates
Abstract
We report on high-quality n-Al0.87Ga0.13N-A0.64Ga0.36N heterostructures over single crystal AlN. For these pseudomorphic heterostructures, high-resolution X-ray and X-ray Topographic analysis was used to establish a threading dislocation density of 7 × 103 cm−2. Using reverse composition graded n+-Al x Ga1-x N contact layers, we obtained linear ohmic contacts with 4.3 Ω mm specific resistance. A critical breakdown field >11 MV cm−1 was also measured. In combination with the channel resistance of 2400 Ω sq−1, these translate to a Baliga’s Figure of Merit of 2.27 GW cm−2. This, to the best of our knowledge is the highest reported value for extreme bandgap AlGaN heterostructures.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jan 01, 2023
- Source ID
- 10.35848/1882-0786/acb487
Entities
People
- Abdullah Mamun
- Asif Khan
- Grigory Simin
- Kamal Hussain
- Kenny Huynh
- M. V. S. Chandrashekhar
- Mark S. Goorsky
- Md. Didarul Alam
- Michael E Liao
- Richard Floyd
- Yekan Wang
Organizations
- Army Research Office
- Office of Naval Research
- United States Department of Energy