Schottky contacts on ultra-high-pressure-annealed GaN with high rectification ratio and near-unity ideality factor
Abstract
We investigate the electrical characteristics of Ni Schottky contacts on n-type GaN films that have undergone ultra-high-pressure annealing (UHPA), a key processing step for activating implanted Mg. Contacts deposited on these films exhibit low rectification and high leakage current compared to contacts on as-grown films. By employing an optimized surface treatment to restore the GaN surface following UHPA, we obtain Schottky contacts with a high rectification ratio of ∼109, a near-unity ideality factor of 1.03, and a barrier height of ∼0.9 eV. These characteristics enable the development of GaN junction barrier Schottky diodes employing Mg implantation and UHPA.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Mar 01, 2023
- Source ID
- 10.35848/1882-0786/acc443
Entities
People
- Dolar Khachariya
- Erhard Kohn
- Grzegorz Kamler
- James Tweedie
- Kacper Sierakowski
- M. Hayden Breckenridge
- Michal Boćkowski
- Pramod Reddy
- Ramón Collazo
- Seiji Mita
- Shane R. Stein
- Spyridon Pavlidis
- Zlatko Sitar
Organizations
- ARPA-E
- Division of Electrical, Communications & Cyber Systems
- Division of Materials Research
- National Centre for Research and Development in Poland
- North Carolina State University
- Office of Naval Research Global