Al0.64Ga0.36N channel MOSHFET on single crystal bulk AlN substrate
Abstract
We report MOCVD-grown Al0.87Ga0.13N/Al0.64Ga0.36N metal-oxide-semiconductor-heterojunction-field-effect-transistors on single crystal bulk AlN substrate. As compared to control devices on AlN template, thermal impedance for devices on single crystal AlN decreased to 1/3 from 31 to 10 K mm W−1, comparable to SiC and copper heat-sinks. This represents a significant thermo-electric co-design advantage over other semiconductors. As a result, the peak drain saturation current increased from 410 to 610 mAmm−1. A 3-terminal breakdown field of 3.7 MV cm−1 was measured, which to date represents state-of-the-art performance for devices with similar Al x Ga1−x N-channel composition. This translates to a measured Baliga figure of merit of 460 MWcm−2.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Jun 01, 2023
- Source ID
- 10.35848/1882-0786/acd5a4
Entities
People
- Abdullah Mamun
- Asif Khan
- Grigory Simin
- Kamal Hussain
- M. V. S. Chandrashekhar
- Md. Didarul Alam
- Richard Floyd
Organizations
- Army Research Office
- Office of Naval Research