RF operation of AlN/Al0.25Ga0.75N/AlN HEMTs with f T /f max of 67/166 GHz
Abstract
We report on highly-scaled Al0.25Ga0.75N channel high electron mobility transistors. Regrown ohmic contacts covering the sidewall of the compressively strained Al0.25Ga0.75N channel exhibited a low contact resistance of R c = 0.23 Ω · mm. Scaled devices with a T-shaped gate showed record high speed for any AlGaN-based transistors, f T/f max = 67/166 GHz, while simultaneously achieving high average breakdown field exceeding 2 MV cm−1. The load-pull measurements performed at 10 GHz revealed a 20% peak power added efficiency with an output power density of 2 W mm−1, which is mainly limited by the RF dispersion.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Nov 01, 2023
- Source ID
- 10.35848/1882-0786/ad0501
Entities
People
- Austin Hickman
- Debdeep Jena
- Eungkyun Kim
- Huili Grace Xing
- James C. M. Hwang
- Jashan Singhal
- Lei Li
- Reet Chaudhuri
- Yong-Jin Cho
Organizations
- Army Research Office
- Office of Basic Energy Sciences