Thin channel β-Ga2O3 MOSFETs with self-aligned refractory metal gates
Abstract
We report the first demonstration of self-aligned gate (SAG) β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) as a path toward eliminating source access resistance for low-loss power applications. The SAG process is implemented with a subtractively defined and etched refractory metal, such as Tungsten, combined with ion-implantation. We report experimental and modeled DC performance of a representative SAG device that achieved a maximum transconductance of 35 mS mm−1 and an on-resistance of ∼30 Ω mm with a 2.5 μm gate length. These results highlight the advantage of implant technology for SAG β-Ga2O3 MOSFETs enabling future power switching and RF devices with low parasitic resistance.
Document Details
- Document Type
- Pub Defense Publication
- Publication Date
- Oct 29, 2019
- Source ID
- 10.7567/1882-0786/ab4d1c
Entities
People
- Andreas Popp
- Andrew J. Green
- Eric R. Heller
- Gregg H. Jessen
- Günter Wagner
- Kelson D. Chabak
- Kevin D. Leedy
- Kyle J. Liddy
- Miles T. Lindquist
- Neil A. Moser
- Nolan S. Hendricks
- Stephen E. Tetlak
Organizations
- Air Force Office of Scientific Research