Demonstration of β-(AlxGa1−x)2O3/β-Ga2O3modulation doped field-effect transistors with Ge as dopant grown via plasma-assisted molecular beam epitaxy

Document Details

Document Type
Pub Defense Publication
Publication Date
Jun 28, 2017
Source ID
10.7567/apex.10.071101

Entities

People

  • Elaheh Ahmadi
  • James S. Speck
  • Onur S. Koksaldi
  • Tom Mates
  • Umesh Mishra
  • Xun Zheng
  • Yuichi Oshima

Organizations

  • Air Force Office of Scientific Research
  • National Science Foundation