Enhanced IR Detector ("nBn") Technology

Abstract

This effort investigates and develops a new detector structure for the development of sensors with increased sensitivity. In "nBn" technology an electron-barrier (“B”) layer is placed between two negatively charged (n-type or “n”) conductive layers, to reduce flow of charge through the material. The reduction in charge flow reduces the noise intrinsic to the material, thus, increasing the material’s sensitivity. The objective of the effort is to make MWIR FPAs easier and more affordable to manufacture and to enable operation at higher temperatures, resulting in more affordable sensor systems with significant reductions in SWaP of system optics, housings and cryogenic coolers. In addition, the barrier detector approach allows for very small pixel pitch (8 micron) enabling FPAs of very large format, 5000x5000 pixel, for persistent surveillance applications that were not possible prior to emergence of this barrier FPA technology.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2017
Source ID
1540a0e8d4dedc03ea378743d797ae8d

Tags

Fields of Study

  • Physics

Readers

  • Image Processing and Computer Vision.
  • Military Science and Technology Research and Modernization.
  • Semiconductor Device Technology

Technology Areas

  • Microelectronics

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