Ferroelectric Computing (FC)

Abstract

The Ferroelectric Computing (FC) program will develop low energy ferroelectric technology for dense and scalable computing performance. Current state of the art silicon devices are not capable of scaling to the performance and efficiency levels necessary for future data-centric architectures and applications in high performance computing. This program addresses this need by developing ferroelectric transistor technology for next-generation power-efficient and scalable computing that is readily integrated into current complementary metal oxide semiconductor (CMOS) fabrication process flows.

Document Details

Document Type
Accomplishment
Publication Date
Oct 01, 2022
Source ID
17929597ac69ffb792b406a35a1f9e14

Tags

Readers

  • Distributed Systems and Data Platform Development
  • Integrated Circuit Design and Technology.
  • Materials Science and Engineering.

Technology Areas

  • Microelectronics

Related Documents