Ferroelectric Computing (FC)
Abstract
The Ferroelectric Computing (FC) program will develop advanced complementary metal oxide semiconductor (CMOS)-compatible ferroelectric transistor technology, compute-in-memory element, and memory compute array technologies for critical data-intensive DoD applications such as radar processing, signal intercept and identification, and image processing. Current compute-in-memory devices are not compatible with advanced CMOS, and are too large to be scaled to the performance and efficiency levels necessary to support these applications. This program will address this shortfall by developing CMOS-compatible ferroelectric transistor technology for next-generation power-efficient, dense, and scalable compute-in-memory accelerators. This program has applied research efforts funded in PE 0602716E, Project ELT-02.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2023
- Source ID
- 18ba588f713e0506e7e7bd5305994522