Diverse & Accessible Heterogeneous Integration (DAHI)
Abstract
Prior DARPA efforts have demonstrated the ability to monolithically integrate inherently different semiconductor types to achieve near-ideal "mix-and-match" capability for DoD circuit designers. Specifically, the Compound Semiconductor Materials On Silicon (COSMOS) program, in which transistors of Indium Phosphide (InP) can be freely mixed with Silicon complementary metal-oxide semiconductor (CMOS) circuits to obtain the benefits of both technologies (very high speed and very high circuit complexity/density, respectively). The Diverse & Accessible Heterogeneous Integration (DAHI) effort will take this capability to the next level, ultimately offering the seamless co-integration of a variety of semiconductor devices (e.g., GaN, InP, GaAs, ABCS), microelectromechanical (MEMS) sensors and actuators, photonic devices (e.g., lasers, photo-detectors) and thermal management structures. This capability will revolutionize our ability to build true "systems on a chip" (SoCs) and allow dramatic size, weight and volume reductions for a wide array of system applications. The Basic Research part of this effort will focus on the development of new hetero-integration processes and capabilities that if successful will ultimately be demonstrated in application specific circuits and transferred into the manufacturing flow. This program also has applied research efforts funded in PE 0602716E, Project ELT-01.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2012
- Source ID
- 1d090546d337a40ec69f2ba61bcf54fe