High Frequency Wide Band Gap Semiconductor Electronics Technology
Abstract
(U)The overall objective of the High Frequency Wide Band Gap Semiconductors Electronic Technology initiative is to fully exploit the properties of wide bandgap semiconductors (WBGS) to enhance the capabilities of microwave and millimeter-wave (MMW) monolithic integrated circuits (MMICs) and in turn, enable future RF sensor, communication, and multifunction military capabilities. The program will also develop revolutionary nitride transistor technology that simultaneously provides extremely high-speed and high-voltage swing [Johnson Figure of Merit larger (JFoM) than 5 THz-v] in a process consistent with large scale integration in enhancement/depletion (E/D) mode logic circuits of 1,000 or more transistors. In addition, this fabrication process will be manufacturable, high-yield, high-uniformity, and highly reliable. Wide bandgap semiconductors have the ability to deliver very high-power and other very favorable high frequency characteristics. Prior efforts have focused on improvements to the basic semiconductor while current efforts are focused on realizing devices and circuits. These technologies will lead to affordable, high performance, reliable, wide bandgap devices and MMICs with characteristics suitable for enabling new DoD systems and greatly improved performance for fielded platforms.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2011
- Source ID
- 1dca09f82a7838624c54762936edc44c
Related Documents
- Root: ELECTRONICS TECHNOLOGY