90nm Next Generation Foundry

Abstract

The Department of Defense (DoD) requires the ability to develop semiconductor technologies down to 90 nanometer (nm) node sizes with the Defense Microelectronics Activity (DMEA) low-volume production-capable foundry capability. This is a critical, time-sensitive requirement to support the DoD's strategy to provide an assured (always available) and trusted source of integrated circuits for critical weapon systems, sensors, and specialized electronic equipment. The capability enhancement to DMEA’s existing microelectronics foundry will cover a multitude of feature sizes down to 90nm and will be the only assured supply in the world to satisfy critical DOD and US Government program issues for the foreseeable future. Market demand for more advanced technology drives the need to make microelectronics with more capabilities in smaller sizes. The way this size is measured is called “node size”. In addition to utilizing various processes, industry constantly develops newer processes with ever smaller node sizes. The pace of this progress follows what is known as “Moore's Law”: the transistor density of integrated circuits doubles every two years. Most domestic semiconductor foundries will discontinue low-volume, high-mix integrated circuits in as little as two years because there is little or no profit margin left. 90nm is a key node size for defense applications but industry forecasts show that the commercial industry will substantially decrease the production of 90nm chips by 2014, thereby making acquisition of this essential technology extremely difficult or impossible in the future. To keep 90nm technology available, DMEA must immediately begin to extend its current capability to 90nm to allow sufficient time to buy equipment, get the processes in place, transfer IP, etc., and ensure the DoD’s ability to use this technology by then. This will also allow DMEA to purchase used equipment at extremely low prices from commercial sources that are closing or have already closed their 90nm process lines. Without enhancing the existing foundry at DMEA to 90nm, in four years the DoD will be without a trusted and assured source for repeatable procurement of the state-of-the-practice integrated circuits that comprise a vast majority of the U.S. arsenal’s microelectronics. This, in turn, will severely impact real-world operations. In the meantime, if a Trusted Supplier is available to make a requested component, DMEA will utilize that source of supply first. This enhancement of DMEA capabilities is absolutely necessary to provide assured and secure microelectronics design and fabrication for trusted microelectronics systems and semiconductor components to ensure DOD technological superiority over potential adversaries. The current DMEA foundry capability will accommodate node sizes down to 180nm. Due to physical limitations in the current DMEA lithography and fabrication equipment, the state-of-the-practice processes down to 90nm that need to be incorporated require an expansion in equipment and facilities to handle the smaller node sizes as well as the larger silicon wafers. This Project will fund expenses associated with planning and implementing the 90nm capability. Initial costs will include design and trade studies, costs associated with implementing force protection standards, floor plan layout and planning activities. Further, it will fund the outfitting of the selected property with the required force protection standards, infrastructure, tenant improvements, furniture, and equipment.

Document Details

• Document Type: Project
• Publication Date: Oct 01, 2014
• Source ID: 2_0603720S_3_0400_PB_2014

Tags

Readers

• Cybersecurity.
• Industrial Economics
• Integrated Circuit Design and Technology.

Technology Areas

• Microelectronics