Diverse & Accessible Heterogeneous Integration (DAHI)
Abstract
Prior DARPA efforts have demonstrated the ability to monolithically integrate different semiconductor types to achieve near-ideal "mix-and-match" capability for DoD circuit designers. Specifically, the Compound Semiconductor Materials On Silicon (COSMOS) program enabled transistors of Indium Phosphide (InP) to be freely mixed with silicon complementary metal-oxide semiconductor (CMOS) circuits to obtain the benefits of both technologies (very high speed and very high circuit complexity/density, respectively). The Diverse & Accessible Heterogeneous Integration (DAHI) effort will take this capability to the next level, ultimately offering the seamless co-integration of a variety of semiconductor devices (for example, Gallium Nitride, Indium Phosphide, Gallium Arsenide, Antimonide Based Compound Semiconductors), microelectromechanical (MEMS) sensors and actuators, photonic devices (e.g., lasers, photo-detectors) and thermal management structures. This capability will revolutionize our ability to build true "systems on a chip" (SoCs) and allow dramatic size, weight and volume reductions for a wide array of system applications. In the Applied Research part of this program, high performance RF/optoelectronic/mixed-signal systems-on-a-chip (SoC) for specific DoD transition applications will be developed as a demonstration of the DAHI technology. To provide maximum benefit to the DoD, these processes will be transferred to a manufacturing flow and made available (with appropriate computer aided design support) to a wide variety of DoD laboratory, Federally Funded Research and Development Center (FFRDC), academic and industrial designers. Manufacturing yield and reliability of the DAHI technologies will be characterized and enhanced. This program has basic research efforts funded in PE 0601101E, Project ES-01, and advanced technology development efforts funded in PE 0603739E, Project MT-15.
Document Details
- Document Type
- Accomplishment
- Publication Date
- Oct 01, 2016
- Source ID
- 31b3a5becfe67bbd6eb5a565b0b10d54
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- Root: ELECTRONICS TECHNOLOGY